BLS/BCT: Bulk Silicon Characterization
Measure lifetime of bulk material prior to sawing with no surface preparation. Accurate measurement of bulk properties in both low- and high-lifetime material.
Measure lifetime of bulk material prior to sawing with no surface preparation. Accurate measurement of bulk properties in both low- and high-lifetime material.
Best available lifetime measurement accuracy. Measure lifetime and surface recombination for a wafer of any quality or crystallinity.
Wafer measurement instrument offering calibrated analysis of temperature-dependent carrier-recombination lifetime.
Measure the calibrated carrier-recombination lifetime of a silicon wafer using both the standard method and the photoluminescence method.
Pre-process elimination of low-quality wafers using measured lifetime, trapping, and resistivity. Process control and optimization at dopant diffusion and nitride deposition steps.
Advanced analysis of solar cells including light I-V and Suns-Voc data. Capability to accurately measure high-efficiency conventional or backside-contact solar cells.
In-line, light I-V and Suns-Voc measurements in a single flash at
3600 units per hour. Capability to accurately measure high-efficiency conventional or backside-contact solar cells.
Perfect for paste-firing optimization and process control. Open-circuit method indicates the upper bound of efficiency for any solar cell precursors.
Measures any crystalline silicon module, including high- capacitance, high-effciency modules, using patented electronic-load technology. Results include Suns-Voc and I-V curves. Over 7 GW of product tested to date. Also ideal for R&D.
You will need a user ID and password in order to download software updates. Please email technical support with your name, company name, instrument model and serial number to request them.