WCT-120TS – Temperature Dependent Lifetime Measurement

Wafer measurement instrument offering calibrated analysis of temperature-dependent carrier-recombination lifetime.

The WCT-120TS enables temperature-dependent carrier-recombination lifetime metrology

Product Overview

The WCT-120TS Temperature Stage instrument showcases the unique measurement and analysis techniques found with our WCT-120 instrument with the added capability to measure the carrier recombination lifetime of silicon wafers at temperatures ranging from 25°C to 200°C. Both the Quasi-Steady-State Photoconductance (QSSPC) lifetime measurement method developed by Sinton Instruments as well as the transient photoconductance technique can be used to measure wafer lifetime.

WCT-120TS System Capabilities

Primary application:
Measuring carrier recombination lifetime in silicon wafers at a range of temperatures.

Other Applications:

  • Monitoring initial material quality
  • Detecting heavy metals contamination during wafer processing
  • Evaluating surface passivation and emitter dopant diffusion
  • Evaluating process-induced shunting using the implied I-V measurement

Further Information

For key features, specifications, and additional information, download the WCT-120TS product note (PDF – 563k).

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Temperature and injection-dependent lifetime results.