Wafer lifetime measurement instrument offering calibrated analysis of temperature-dependent carrier-recombination lifetime.
The WCT-120TS Temperature Stage instrument showcases the unique measurement and analysis techniques found with our WCT-120 instrument with the added capability to measure the carrier recombination lifetime of silicon wafers at temperatures ranging from 25°C to 200°C. Both the Quasi-Steady-State Photoconductance (QSSPC) lifetime measurement method developed by Sinton Instruments as well as the transient photoconductance technique can be used to measure wafer lifetime.
WCT-120TS System Capabilities
Measuring carrier recombination lifetime in silicon wafers at a range of temperatures.
- Monitoring initial material quality
- Detecting heavy metals contamination during wafer processing
- Evaluating surface passivation and emitter dopant diffusion
- Evaluating process-induced shunting using the implied I-V measurement
For key features, specifications, and additional information, download the WCT-120TS product note (PDF – 563k).